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| (R) STPS160H100TV HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP AVALANCHERATED LOW INDUCTION PACKAGE INSULATED PACKAGE: Insulating Voltage = 2500 V(RMS) Capacitance = 45 pF DESCRIPTION High voltage dual Schottky rectifier designed for high frequency telecom and computer Switched Mode Power Supplies and other power converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 110C = 0.5 Per diode Per device Value 100 180 80 160 1000 2 10 - 55 to+ 150 150 10000 Unit V A A A A A C C V/s Package d in ISOTOP, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. 2 x 80 A 100 V 150 C 0.68 V K1 A1 K2 A2 ISOTOPTM tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square *: 1 dPtot < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj July 1999 - Ed: 2A 1/4 STPS160H100TV THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF** Parameter Reverse leakage Current Forward Voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Parameter Junction to case Per leg Total Coupling Value 0.9 0.5 0.14 Unit C/W C/W C/W Min. Typ. 13 Max. 40 50 0.75 0.63 0.80 0.68 0.87 0.74 0.92 0.80 Unit A mA V VR = VRRM IF = 60 A IF = 60 A IF = 80 A IF = 80 A IF = 120 A IF = 120 A IF = 160 A IF = 160 A 0.63 0.69 0.75 0.59 To evaluate the conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0015 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 80 70 60 50 40 30 20 10 0 0 20 IF(av) (A) 40 60 =tp/T T =1 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) 100 Rth(j-a)=Rth(j-c) 80 60 40 T Rth(j-a)=2C/W 20 tp =tp/T tp Tamb(C) 50 75 100 125 150 80 100 0 0 25 2/4 STPS160H100TV Fig. 3: Non repetitive surgepeak forward current versus overloadduration(maximum values, per diode). IM(A) 600 500 400 300 200 IM Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 = 0.5 Tc=50C 0.4 Tc=90C t = 0.2 = 0.1 T Single pulse 100 0 1E-3 0.2 0.0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 1E-2 tp(s) 1E-1 =tp/T tp 1E+0 5E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) 5E+1 1E+1 1E+0 Tj=125C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode) . C(nF) 10.0 F=1MHz Tj=25C 1.0 1E-1 1E-2 1E-3 Tj=25C VR(V) 0 10 20 30 40 50 60 70 80 90 100 0.1 VR(V) 1 2 5 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 Tj=125C 100 Tj=25C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/4 STPS160H100TV PACKAGE MECHANICAL DATA ISOTOPTM DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Cooling method: C Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Ordering type Marking Package ISOTOP Weight 27g without screws Base qty 10 Delivery mode Tube Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 STPS160H100TV STPS160H100TV Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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